An innovative modelization of loss mechanism in silicon integrated inductors

IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing

Volumn 46, Issue 12, 1999, Pages 1453-1460

  Arcioni, P ^a   Castello, R ^a   Perregrini, L ^a   Sacchi, E ^a  

^a UNIVERSITY OF PAVIA   (Italy)

Author keywords

Equivalent circuit; Fitting, integrated inductors; Q factor; Radio frequency

Indexed keywords

ELECTRIC INDUCTORS; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK SYNTHESIS; INTEGRATED CIRCUIT LAYOUT; LUMPED PARAMETER NETWORKS; Q FACTOR MEASUREMENT; SEMICONDUCTING SILICON; SUBSTRATES;

SILICON INTEGRATED INDUCTORS;

EQUIVALENT CIRCUITS;

EID: 0033280501     PISSN: 10577130     EISSN: None     Source Type: Journal    
DOI: 10.1109/82.809531     Document Type: Article

References (8)

1. I. Bahl and P. Bhartia, Microwave Solid State Circuit Design. New York: Wiley, 1998, sec. 2.4.
2. D. Lovelace, N. Camilleri, and G. Kannel Silicon MMIC inducor modeling for high volume, low cost applications, Microwave ]., 60-71, Aug. 1994.
3. J. R. Long and M. A. CopelandModeling, characterization and design of monolithic inductors for silicon RFIC's, in Proc. IEEE 1996 Custom Integrated Circuits Conf.. 185-184, 1996.
4. K. B. Ashby, I. A. Koullias, W. C. Finley, J. J. Bastek, and S.S. MoinianHigh Q inductors for wireless applications in a complementary silicon bipolar process, IEEE J. Solid-State Circuits, vol. 31, 4-9, . 1996.
5. H. M. GreenhouseDesign of planar rectangular microelectronic inductors, IEEE Trans. Parts, Hybrids, and Packaging, vol. PHP-10, 101-109, June 1974.
6. P. Arcioni, R. Castello, G. De Astis, E. Sacchi, and F. SveltoDesign and characterization of Si integrated inductors, in Proc. IEEE Instrumentation and Measurement Technology Conf., St Paul, MN, 1998, 1395-1401.
7. J. N. Burghartz, K. A. Jenkins, and M. SoyuerMultilevel-spiral inductors using VLSI interconnect technology, IEEE Electron Device Lett., vol. 17, 42830, Sept. 1996.
8. C. P. Yue and S. S. WongOn-chip spiral inductors with patterned ground shields for Si-based RF IC's, IEEE J. Solid-State Circuits, vol. 33, 743-752, May 1998.