20-GHz INP-HBT voltage-controlled oscillator with wide tuning range

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2001, Pages 161-164

  Djahanshahi, H ^a   Saniei, N ^a   Voinigescu, S P ^a   Maliepaard, M C ^a   Salama, C A T ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED OPTOELECTRONICS; OSCILLATORS (ELECTRONIC); SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE; TUNING; VOLTAGE CONTROL;

FREQUENCY TUNING RANGE; PHASE NOISE; VOLTAGE CONTROLLED OSCILLATOR;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034862117     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. T silicon bipolar technology
2. Highly integrated InP HBT optical receivers
3. Process- And geometry-scalable bipolar transistor and transmission line models for Si and SiGe MMIC in the 5-22GHz range
4. 10 and 26 GHz differential VCOs using InP HBTs
5. An 11-GHz 3-V SiGe voltage-controlled oscillator with integrated resonator