Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition

Journal De Physique. IV : JP

Volumn 11, Issue 3, 2001, Pages

  Pons, M ^a   Meziere J ^a   Dedulle, J M ^a   Wan Tang Kuan, S ^a   Blanquet, E ^a   Bernard, C ^a   Ferret, P ^a   Di Cioccio, L ^a   Billon, T ^a   Madar, R ^a  

^a UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; EPITAXIAL GROWTH; HYDROGEN; PRESSURE EFFECTS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

DEFECT DENSITY;

SILICON CARBIDE;

EID: 0034843594     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (22)