Steady-state and transient current transport in undoped polycrystalline diamond films

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 4966-4976

  Jauhiainen, Anders ^a   Bengtsson, Stefan ^a   Engström, Olof ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BASIC MODELS; CAPACITANCE VOLTAGE CHARACTERISTIC; CURRENT STRESS; CURRENT TRANSIENTS; DIAMOND LAYERS; ELECTRICAL MEASUREMENT; ELECTRICAL PROPERTY; ENERGY DISTRIBUTIONS; FIELD DEPENDENCIES; HOT-FILAMENT CHEMICAL VAPOR DEPOSITION; LONG TERM; MATERIAL RELIABILITY; MODERATE TEMPERATURE; P-TYPE SILICON; POLYCRYSTALLINE DIAMOND FILMS; POLYCRYSTALLINE DIAMOND THIN FILMS; POOLE-FRENKEL; POWER LAW; SILICON ON INSULATOR; SILICON SUBSTRATES; STEADY-STATE CURRENTS; THERMAL EQUILIBRIUMS; TIME-SCALES; TRANSIENT CURRENT; TRANSIENT TRANSPORT;

CHEMICAL VAPOR DEPOSITION; DEPOSITION; DIAMONDS; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; SUBSTRATES; THIN FILMS; TRANSIENTS;

DIAMOND FILMS;

EID: 0000893734     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366363     Document Type: Article

References (28)

1. M. I. Landstrass and D. M. Fleetwood, Appl. Phys. Lett. 56, 2316 (1990).
2. N. K. Annamalai, J. Sawyer, P. Karulkar, W. Maszara, and M. Landstrass, IEEE Trans. Nucl. Sci. 40, 1780 (1993).
3. For a general review see for instance: Properties and Growth of Diamond, edited by G. Davies (Short Run Press Ltd., Exeter, England, 1994); or Diamond: Electronic Properties and Applications, edited by L. S. Pan and D. N. Kania (Kluwer Academic, Norwell, MA, 1995).
4. For a general review see for instance: Properties and Growth of Diamond, edited by G. Davies (Short Run Press Ltd., Exeter, England, 1994); or Diamond: Electronic Properties and Applications, edited by L. S. Pan and D. N. Kania (Kluwer Academic, Norwell, MA, 1995).
5. B. Liss and O. Engström, J. Appl. Phys. 78, 1824 (1995).
6. R. M. Hill, Philos. Mag. 23, 59 (1971).
7. C-C. Hung, G. J. Valco, S. M. Aithal, and V. V. Subramaniam, J. Appl. Phys. 78, 7109 (1995).
8. B.-R. Huang and D. K. Reinhard, Appl. Phys. Lett. 59, 1494 (1991).
9. T. Sugino, Y. Muto, J. Shirafuji, and K. Kobashi, Diamond Relat. Mater. 2, 797 (1993).
10. S. Schröppel, R. Hessmer, M. Schreck, and B. Stritzker, in Diamond for Electronic Applications, Materials Research Society Symposium Proceedings, edited by D. L. Dreifus, A. Collins, T. Humphreys, K. Das, and P. E. Pehrsson (Materials Research Society, Pittsburgh, PA, 1996), Vol. 416, p. 337.
11. P. Gonon, A. Deneuville, F. Fontaine, and E. Gheeraert, J. Appl. Phys. 78, 6633 (1995).
12. P. Gonon, Y. Boiko, S. Prawer, and D. Jamieson, J. Appl. Phys. 79, 3778 (1996).
13. B. Fiegl, R. Kuhnert, M. Ben-Chorin, and F. Koch, Appl. Phys. Lett. 65, 371 (1994).
14. T. Sugino, Y. Muto, K. Karasutani, J. Shirafuji, and K. Kobashi, Diamond Relat. Mater. 2, 803 (1993).
15. M. Werner, O. Dorsch, A. Hinze, E. Obermeier, R. E. Harper, C. Johnston, P. R. Chalker, and I. M. Buckley-Golder, Diamond Relat. Mater. 2, 825 (1993).
16. K. Srikanth, S. Ashok, A. Badzian, T. Badzian, and R. Messier, Thin Solid Films 164, 187 (1988).
17. S. C. Binari, M. Marchywka, D. A. Koolbeck, H. B. Dietrich, and D. Moses, Diamond Relat. Mater. 2, 1020 (1993).
18. M. A. Piano, M. I. Landstrass, S. Han, L. S. Pan, S. McWilliams, and D. R. Kania, in Proceedings of the Third International Symposium on Diamond Materials, edited by J. P. Dismukes and K. V. Ravi (The ElectroChemical Society, Pennington, NJ, 1993), Vol. 93-17, p. 987.
19. A. Jauhiainen, S. Bengtsson, and O. Engström in Diamond for Electronic Applications, Proceedings of Material Research Society, edited by D. L. Dreifus, A. Collins, T. Humphreys, K. Das, and P. E. Pehrsson (Materials Research Society, Pittsburgh, PA, 1996), Vol. 416, p. 331.
20. Diamonex, Incorporated, Iron Run Corporate Center, 7150 Windsor Drive, Allentown, PA 18106-9328.
21. See for instance: S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap. 7.
22. B. A. Fox, M. L. Hartsell, D. M. Malta, H. A. Wynands, G. J. Tessmer, and D. L. Dreifus, in Diamond for Electronic Applications, Materials Research Society Proceedings edited by D. L. Dreifus, A. Collins, T. Humphreys, K. Das, and P. E. Pehrsson (Materials Research Society, Pittsburgh, PA, 1996), Vol. 416, p. 319.
23. A. Jauhiainen, S. Bengtsson, O. Engström, D. J. Pickrell, and D. S. Hoover, in Proceedings of the Third International Symposium on Diamond Materials, Proceedings of the Electrochemical Society, edited by J. P. Dismukes and K. V. Ravi (The Electrochemical Society, Pennington, New Jersey, 1993), Vol. 93-17, p. 927.
24. H. Scher, M. F. Shlesinger, and J. T. Bendler, Phys. Today January, 26 (1991).
25. S. Han and R. S. Wagner, Appl. Phys. Lett. 68, 3016 (1996).
26. S. Bengtsson, G. I. Andersson, M. O. Andersson, and O. Engström, J. Appl. Phys. 72, 124 (1992).
27. C. H. Seager and G. E. Pike, Appl. Phys. Lett. 40, 471 (1982).
28. S. Bengtsson, A. Jauhiainen, and O. Engström, J. Electrochem. Soc. 139, 2302 (1992).