Dependence of turn-on and turn-off characteristics on anode/gate geometry of high-voltage 4H-SiC GTO thyristors

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 175-178

  Fedison, J B ^a   Chow, T P ^a   Ghezzo, M ^a   Kretchmer, J W ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); SEMICONDUCTING SILICON; SILICON CARBIDE;

ANODE GEOMETRIES;

THYRISTORS;

EID: 0034822509     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. SiC devices: Physics and numerical simulation
2. Status of silicon carbide as a wide-bandgap semiconductor for high-temperature applications: A review
3. 700 V Asymmetrical 4H-SiC gate turn-off thyristors
4. High current density 800 V 4H-SiC gate turn-off thyristors
5. 2600 V, 12 A, 4H-SiC, Asymmetrical gate turn-off thyristor development
6. Factors influencing the design and performance of 4H-SiC GTO thyristors
7. Switching characteristics of 3 kV 4H-SiC GTO thyristors
8. Characterization of 4H-SiC gate turn-off thyristor
9. A destructive-free parameter extraction scheme for GTO models