Effects of ArF excimer irradiation on single energy and multi energy Ge ion implanted silica

Journal of Non-Crystalline Solids

Volumn 280, Issue 1-3, 2001, Pages 169-176

  Magruder III, R H ^a   Weller, R A ^b   Weeks, R A ^b   Wehrmeyer, J ^b   Zuhr, R A ^c   Hensley, D K ^c  

^a BELMONT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCIMER LASERS; ION IMPLANTATION; LASER BEAM EFFECTS; LASER PULSES; LIGHT ABSORPTION; SEMICONDUCTING GERMANIUM; SILICA;

MULTIENERGY ION IMPLANTATION; SINGLE ENERGY ION IMPLANTATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0034818090     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(00)00372-0     Document Type: Article

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