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Solid State Phenomena

Volumn 80-81, Issue , 2001, Pages 83-88

Poly-crystallized SiGe thin films in a low-temperature process

(1) Noguchi, T a

a SONY CORPORATION (Japan)

Author keywords

Excimer laser; Gate; Polycrystalline; SiGe; SOI; Sputtering; TFT

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS MATERIALS; ANNEALING; CRYSTALLIZATION; CURRENT DENSITY; EXCIMER LASERS; LOW TEMPERATURE OPERATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SPUTTERING; THRESHOLD VOLTAGE;

DOPANT ACTIVATION; FLAT BAND VOLTAGE; METAL OXIDE SEMICONDUCTOR TRANSISTORS; POLY CRYSTALLIZED SILICON GERMANIUM THIN FILMS;

THIN FILMS;

EID: 0034817877 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: 10.4028/www.scientific.net/ssp.80-81.83 Document Type: Conference Paper

Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.