On the correlation between deposition rate and process parameters in remote plasma-enhanced chemical vapor deposition

Plasma Chemistry and Plasma Processing

Volumn 18, Issue 2, 1998, Pages 189-214

  Bayer, Ch ^a   Von Rohr, Ph Rudolf ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Deposition rate; Modeling; Remote PECVD; Silicon dioxide

Indexed keywords

EID: 0032380008     PISSN: 02724324     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1021698331973     Document Type: Article

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