Temperature dependence of threshold current - A better criterion than T0?

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4283, Issue 1, 2001, Pages 238-246

  Houle, Timothy J ^a   Onischenko, Alex I ^a   Rorison, Judy M ^a   Penty, Richard V ^a   White, Ian H ^a   Springthorpe, Anthony J ^b   White, Kenton ^b   Paddon, Paul ^b   Garanzotis, T ^b  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b NORTEL NETWORKS   (Canada)

Author keywords

Laser diodes; T0 measurements; Temperature sensitivity

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; PHONONS; THERMAL EFFECTS;

THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0034779359     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.432571     Document Type: Article

References (14)

1. Temperature dependence of emission efficiency and lasing threshold in laser diodes
2. The temperature dependence of the threshold current of GaInAsP/InP DH lasers
3. On the temperature sensitivity of semiconductor lasers
4. Effect of recombination in separate-confinement heterostructure (SCH) layers on temperature characteristics of semiconductor lasers
5. Auger recombination effect on threshold current of InGaAsP quantum well lasers
6. An investigation into the temperature sensitivity of strained and unstrained multiple quantum-well, long wavelength lasers: New insight and methods of characterisation
7. The temperature dependence of 1.3- and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers
8. Dependence of threshold current on QW position and on pressure in 1.5μm InGaAs(P) lasers
9. Temperature sensitivity and high temperature operation of long wavelength semiconductor lasers
10. Self-consistent analysis of high-temperature effects on strained-layer multiquantum-well InGaAsP-InP lasers
11. Strain-compensated 1.3-mu m AlGaInAs quantum-well lasers with multiquantum barriers at the cladding layers
12. The effects of loss and nonradiative recombination on the temperature dependence of threshold current in 1.5-1.6μm GaInAsP/InP lasers
13. Carrier loss resulting from Auger recombination in InGaAsP/InP double heterojuction laser diodes: Spectroscopy of 980nm high energy emission
14. Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5μm compressively strained semiconductor lasers