A new registration technique using voltage contrast images for low energy electron beam lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4343, Issue , 2001, Pages 334-341

  Nakasugi, T ^a   Ando, A ^a   Sugihara, K ^a   Miyoshi, M ^a   Okumura, K ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Electron beam; Low energy; Mark detection; Negative charging; Registration technique; Voltage contrast

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; ELECTRON BEAMS; IMAGE ANALYSIS; PHOTORESISTS; THICK FILMS;

LOW-ENERGY ELECTRON BEAM LITHOGRAPHY (LEEBL);

ELECTRON BEAM LITHOGRAPHY;

EID: 0034763267     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.436671     Document Type: Conference Paper

References (6)

1. Arrayed miniature electron beam columns for high throughput sub-100 nm lithography
2. Contrast mechanism of negatively charged insulators in scanning electron microscope
3. Static capacitance contrast of LSI covered with an insulator film in low accelerating voltage scanning electron microscope
4. Initialization by erasing the surface potential of negatively charged insulators in scanning electron microscope (SEM)
5. Space-charge-limited currents in electron-irradiated dielectrics
6. Investigation of scanning electron microscope overlay metrology