Novel methods of nanoscale wire formation

MRS Bulletin

Volumn 24, Issue 8, 1999, Pages 13-19

  Prokes, Sharka M ^a   Wang, Kang L ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DRY ETCHING; ELECTRON CYCLOTRON RESONANCE; NANOTECHNOLOGY; REACTIVE ION ETCHING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

CHEMICALLY ASSISTED ION BEAM ETCHING (CAIBE); NANOSCALE WIRE FORMATION; REACTIVE ION BEAM ETCHING (RIBE);

SEMICONDUCTOR QUANTUM WIRES;

EID: 0032676813     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/S0883769400052842     Document Type: Article

References (27)

1. D.R. Stewart, D. Sprinzak, C.M. Marcus, C.I. Duruoz, and J.S. Harris Jr., Science 278 (1997) p. 1784.
2. D.D. Awschalom and D.P. DiVincenzo, Phys. Today 48 (1995) p. 43.
3. D. Goldhaber-Gordon, M.S. Montemerlo, J.C. Love, G.J. Opiteck, and J.C. Ellenbogen, in Proc. IEEE 85 (Institute of Electronic and Electrical Engineering, New York, 1997) p. 521.
4. A. Balandin and K.L. Wang, Phys. Rev. B: Condens. Matter 58 (1998) p. 1544.
5. A.C. Warren, D.A. Antoniadis, and H.I. Smith, Phys. Rev. Lett. 56 (1986) p. 1858; W. Hansen, M. Horst, J.P. Kotthaus, U. Merkt, Ch. Sikorski, and K. Ploog, Phys. Rev. Lett. 58 (1987) p. 2586.
6. A.C. Warren, D.A. Antoniadis, and H.I. Smith, Phys. Rev. Lett. 56 (1986) p. 1858; W. Hansen, M. Horst, J.P. Kotthaus, U. Merkt, Ch. Sikorski, and K. Ploog, Phys. Rev. Lett. 58 (1987) p. 2586.
7. H.L. Liu, D.K. Biegelsen, F.A. Ponce, N.M. Johnson, and R.F.W. Pease, J. Vac. Sci. Technol., B 11 (1993) p. 2532.
8. Y. Nakajima, Y. Takahashi, S. Horiguchi, K. Iwadate, H. Namatsu, K. Kurihara, and M. Tabe, Appl. Phys. Lett. 65 (1994) p. 2833; J.L. Liu, Y. Shi, F. Wang, R. Zhang, P. Han, B.H. Mao, and Y.D. Zheng, J. Vac. Sci. Technol., B 13 (1995) p. 2721.
9. Y. Nakajima, Y. Takahashi, S. Horiguchi, K. Iwadate, H. Namatsu, K. Kurihara, and M. Tabe, Appl. Phys. Lett. 65 (1994) p. 2833; J.L. Liu, Y. Shi, F. Wang, R. Zhang, P. Han, B.H. Mao, and Y.D. Zheng, J. Vac. Sci. Technol., B 13 (1995) p. 2721.
10. G. Jin, Y.S. Tang, J.L. Liu, and K.L. Wang, Appl. Phys. Lett. 74 (17) (1999) p. 2471.
11. E.A. Dobisz, F.A. Buot, and C.R.K. Marrian, in Nanomaterials: Synthesis, Properties and Applications, edited by A.S. Edelstein and R.C. Cammarata (Institute of Physics, Bristol, 1996) p. 497.
12. J.W. Lyding, T.C. Shen, J.S. Hubacek, J.R. Tucker, and G.C. Abein, Appl. Phys. Lett. 64 (1994) p. 2010.
13. L. Tsau, D. Wang, and K.L. Wang, Appl. Phys. Lett. 64 (16) (1994) p. 2133.
14. R. Germann, A. Forchel, M. Bresch, and H.P. Meier, J. Vac. Sci. Technol., B 7 (1989) p. 1475.
15. K.K. Ko, S.W. Pang, T. Brock, M.W. Cole, and L.M. Casas, J. Vac. Sci. Technol., B 12 (1994) p. 3382.
16. T.M. Jung, S.M. Prokes, and R. Kaplan, J. Vac. Sci. Technol., A 12 (1994) p. 1838.
17. S. Iijima, Nature 354 (1991) p. 56.
18. N. Hamada, S. Sawada, and A. Oshiyama, Phys. Rev. Lett. 68 (1992) p. 1578.
19. D.A. Tulchinsky, M.H. Kelley, J.J. McClelland, R. Gupta, and R.J. Celotta, J. Vac. Sci. Technol., A 16 (1998) p. 1817.
20. P.C. Searson, R.C. Cammarata, and C.L. Chien, J. Electron. Mater. 24 (1995) p. 955.
21. C.R. Martin, Chem. Mater. 8 (1996) p. 1739.
22. R. Ferre, K. Ounadjela, J.M. George, L. Piraux, and S. Dubois, Phys. Rev. B 56 (1997) p. 14066.
23. S. Shingubara, O. Okino, Y. Sayama, H. Sakaue, and T. Takahagi, Jpn. J. Appl. Phys. 36 (1997) p. 7791.
24. Z.B. Zhang, J.Y. Ying, and M.S. Dresselhaus, J. Mater. Rev. 13 (1998) p. 1745.
25. J.L. Liu, S.J. Cai, G.L. Jin, and K.L. Wang, Electrochem. Solid-State Lett. 1 (4) (1998) p. 188.
26. T. Ishida, W. Mizutani, H. Tokumoto, H. Hokari, H. Azehara, and M. Fujihira, Appl. Surf. Sci. 132 (1998) p. 786.
27. J.F. Liu, K.Z. Yang, and Z.H. Lu, J. Am. Chem. Soc. 119 (1997) p. 11061.