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Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 24, 2000, Pages

Reaction-diffusion model for thermal growth of silicon nitride films on Si

(2) De Almeida, R M C a Baumvol, I J R a

a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; SILICON NITRIDE;

ARTICLE; DIFFUSION; MICROFILM; MODEL; MOTION; PRESSURE; REACTION ANALYSIS; STOICHIOMETRY; THERMODYNAMICS; THICKNESS;

EID: 0034670781 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.62.R16255 Document Type: Article

Times cited : (23)

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