Metrology strategy for next generation semiconductor manufacturing

IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

Volumn , Issue 1, 2000, Pages 91-93

  Diebold, Alain C ^a  

^a SEMATECH   (United States)

Author keywords

Critical Dimensions; Gate dielectric; Low k; Metrology; Roadmap

Indexed keywords

ELECTRON BEAMS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELLIPSOMETRY; ENERGY GAP; ION BEAMS; LIGHTING; LITHOGRAPHY; MEASUREMENTS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY;

INTERCONNECT METROLOGY;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0034583833     PISSN: 1523553X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

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3. Depth of field at high magnification of scanning electron microscope
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6. Non-destructive, in-line characterization of shallow junction processes
7. Optoacoustic metrology for copper interconnects using Impulsive Stimulated Thermal Scattering (ISTS)
8. Recent progress in picosecond ultrasonic process metrology
9. Semiconductor material applications of rapid x-ray reflectometry
10. Gate dielectric metrology using advanced TEM measurements
11. Using grazing incidence x-ray reflectivity to characterize thin films for the semiconductor industry