Non-destructive, in-line characterization of shallow junction processes

Materials Research Society Symposium - Proceedings

Volumn 610, Issue , 2000, Pages

  Kluth, G J ^a   Bechtler, L ^a   Borden, P ^a   Mi, J ^a  

^a Boxer Cross Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; OPTICAL VARIABLES MEASUREMENT; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

CARRIER ILLUMINATION TECHNIQUE; OPTICAL METROLOGY TOOL; SHALLOW JUNCTION PROCESSES;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 18844479867     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)

1. Non destructive profile measurements of annealed shallow implants