Threshold characteristics of InGaAsP/InP multiple quantum well lasers

Semiconductor Science and Technology

Volumn 15, Issue 12, 2000, Pages 1131-1140

  Asryan, L V ^a,c   Gun'ko, N A ^a   Polkovnikov, A S ^a   Zegrya, G G ^a   Suris, R A ^a   Lau, P K ^b   Makino, T ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b NORTEL NETWORKS   (Canada)

^c STONY BROOK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; CURRENT DENSITY; LEAKAGE CURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

AUGER RECOMBINATION CURRENTS;

QUANTUM WELL LASERS;

EID: 0034516375     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/12/306     Document Type: Article

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