High-power and high-temperature operation of InGaAsP/InP multiple quantum well lasers

Semiconductor Science and Technology

Volumn 14, Issue 12, 1999, Pages 1069-1075

  Asryan, L V ^a   Gun'ko, N A ^a   Polkovnikov, A S ^a   Suris, R A ^a   Zegrya, G G ^a   Elenkrig, B B ^c   Smetona, S ^c   Simmons, J G ^c   Lau, Pey Kee ^b   Makino, T ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b NORTEL NETWORKS   (Canada)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

LIGHT CURRENT CHARACTERISTICS (LCC);

QUANTUM WELL LASERS;

EID: 0033327773     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/12/310     Document Type: Article

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