Simulation of heat and mass transfer during growth of silicon carbide single crystals

Semiconductors

Volumn 31, Issue 7, 1997, Pages 672-676

  Kirillov, B A ^a   Bakin, A S ^a   Tairov, Yu M ^a   Solnyshkin, S N ^a  

^a SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040515135     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187063     Document Type: Article

References (12)

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3. Yu. M. Tairov and V. F. Tsvetkov, in Growth and Defect Structures (series on Crystals: Growth, Properties, and Applications) edited by H. C. Freyhardt, Springer-Verlag, N. Y., 1984, Vol. 10, p. 1.
4. D. Hofmann, M. Heinze, A. Winnacker, F. Durst, and L. Kadinski et al., J. Cryst. Growth 146, 214 (1995).
5. F. Raǐkhel', Yu. M. Tairov, M. G. Travadzhyan, and V. F. Tsvetkov, Izv. Akad. Nauk SSSR, Neorg. Mater. 16, 1011 (1980).
6. J. Drowart and G. De Maria, Silicon Carbide - A High Temperature Semiconductor, Pergamon Press, N. Y., 1960, p. 16.
7. Yu. M. Tairov and V. F. Tsvetkov, Izv. Akad. Nauk SSSR, Neorg. Mater. 13, 1606 (1976).
8. B. P. Gerasimov, A. V. Lesunovskiǐ, V. V. Mitin, T. A. Borisova, and D. Ya. Rovenskiǐ in Numerical Methods [in Russian], Nauka, Moscow, 1989, p. 112.
9. Yu. M. Tairov, V. A. Taranets, and V. F. Tsvetkov, Izv. Akad. Nauk SSSR, Neorg. Mater. 15, 9 (1979).
10. S. K. Lilov, Yu. M. Tairov, and V. F. Tsvetkov, J. Cryst. Growth 46, 269 (1979).
11. L. D. Landau and E. M. Lifshitz, Fluid Mechanics, Pergamon Press, N. Y. [Russian orig., Nauka, Moscow, 1988].
12. Gas Encyclopaedia, Elsevier, 1976.