Mass production of high brightness blue and green LEDs by MOCVD

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 91-98

  Tran, C A ^a   Karlicek Jr , R F ^a   Brown, M G ^a   Eliashevich, I ^a   Gurary, A ^a   Schurman, M ^a   Stall, R ^a  

^a EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SPECTROSCOPY;

GALLIUM NITRIDE;

LIGHT EMITTING DIODES;

EID: 0033221603     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<91::AID-PSSA91>3.0.CO;2-E     Document Type: Article

References (7)

1. S. NAKAMURA, T. MUKAI, M. SENOH, S. NAGAHAMA, and N. IWASA, J. Appl. Phys. 74, 3911 (1993).
2. S. NAKAMURA, M. SENOH, N. IWASA, and S. NAGAHAMA, Appl. Phys. Lett. 67, 1868 (1995).
3. G. S. TOMPA, P. A. ZAWADSKI, M. McKEE, E. WOLAK, K. MOY, R. A. STALL, A. GURARY, and N. SCHUMAKER, Mater. Res. Soc. Symp. Proc. 335, 241 (1994).
4. S. NAKAMURA, Jpn. J. Appl. Phys. 30, 1348 (1991).
5. C. A. TRAN, R. F. KARLICEK, JR., M. SCHURMAN, M. G. BROWN, I. ELIASHEVICH, I. FERGUSON, and R. STALL, J. Cryst. Growth 195, 397 (1998).
6. I-HSIU Ho and G. B. STRINGFELLOW, Appl. Phys. Lett. 69, 2701 (1996).
7. S. CHICHIBU, T. AZUHATA, T. SOTA, and S. NAKAMURA, Appl. Phys. Lett. 69, 4188 (1996).