Study the impact of liner thickness on the 0.18 μm devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectric

Thin Solid Films

Volumn 377-378, Issue , 2000, Pages 776-780

  Lan, J K ^a   Wang, Y L ^b   Wu, Y L ^d   Liou, H C ^c   Wang, J K ^b   Chiu, S Y ^a   Cheng, Y L ^a   Feng, M S ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c DOW CORNING CORPORATION   (United States)

^d NATIONAL CHI NAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; HYDROGEN INORGANIC COMPOUNDS; PERMITTIVITY; SILICA;

HYDROGEN SILSESQUIOXANE;

DIELECTRIC FILMS;

EID: 0034507220     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01289-X     Document Type: Article

References (15)

1. The semiconductor technology roadmap for semiconductors, Semiconductor Industry Association, San Jose, CA, 1997.
2. Technology news announcement from Fujitsu R/D center, Nov. 16, 1998; 1999 world manufacture, 1999 status report, Integrated Circuit Engineering publication, Scottsdale, AZ, 1999, P. 10-6.
3. S. Yang, S. Ahmed, B. Arcot, R. Arghavani, P. Bai, S. Chamber, P. Charvat, R. Cotner, R. Gasser, T. Ghani, M. Hussein, C. Jan, C. Kardas, J. Maiz, P. McGregor, B. McIntypre, P. Nguyen, P. Packan, I. Post, S. Sivakumar, J. Steigerwald, M. Taylor, B. Tufts, S. Tyagi, M. Bohr, IEDM Proceedings, 1998.
4. S.A. Wu, Y.L. Wang, Y.L. Cheng, to be published.
5. Bremmer J., Liu Y., Gruszynski K., Dall F. Mater. Res. Symp. Proc. 476:1997;37.
6. B. Ahlburn, G.A. Brown, T.R. Seha, T.F. Zoes, Y. Yokose, D.S. Balance, K.A. Scheibert, Proceedings of the First International DUMIC, Santa Clara, CA, Feb. 21-22, 1995, p. 36.
7. Chiu T., Seidel T.E. Mater. Res. Symp. Proc. 381:1995;1.
8. Lee W.W., Ho P.S. MRS Bull. 22:(10):1997;19.
9. Weste N.H.E., Eshraghian K. Principles of CMOS VLSI Design - A Systems Perspective. 2nd :1993S;Addison-Wesley.
10. C.S. Pai, A.N. Velaga, W.S. Lindenberger, W.Y.C. Lai, K.P. Cheung, F.H. Baumann, C.P. Chang, C.T. Liu, R. Liu, P.W. Diodato, J.I. Colonell, H. Vaidya, S.C. Vitkavage, J.T. Clemens, F. Tsubokura, Proceedings of IITC, San Francisco, CA, 1998, p. 39.
11. K. Barla, O. Demolliens, C. Gounelle, C. Lair, Y. Lafarges, V. Lasserre, S. Lis, E. Lous, C. Maddalon, Y. Morand, G. Passemard, F. Pires, C. Verove, Proceedings of the Fifthteenth VMIC, Santa Clara, CA, June 16-18, 1998, p. 25.
12. N. Oda, T. Usami, T. Yokoyama, A. Matsumoto, K. Mikagi, H. Gomi, I. Sakai, Proceedings of IITC, San Francisco, CA, June 1-3, 1998, p. 208.
13. Stine B.E., Ouma D.O., Divecha R.R., Boning D.S., Chung J.E., Hetherington D.L., Harwood C.R., Nakagawa O.S., Oh S.Y. IEEE Trans. Semiconductor Manuf. 11:(1):1998;129. February.
14. Fury M.A. Solid State Technol. 38:1995;81.
15. Y. Liu, C. McMillan, F. Dall, Proceedings of DUMIC, February 16-17, 1998, p. 305.