New via formation process for suppressing the leakage current between adjacent vias for hydrogen silicate based inorganic SOG intermetal dielectric

Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998

Volumn 1998-June, Issue , 1998, Pages 208-210

  Oda, N ^a   Usami, T ^a   Yokoyama, T ^a   Matsumoto, A ^a   Mikagi, K ^a   Gomi, H ^a   Sakai, I ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT INTERCONNECTS; LEAKAGE CURRENTS; PLASMA APPLICATIONS; SILICATES; SPIN GLASS;

CMOS DEVICES; FORMATION PROCESS; INTER-METAL DIELECTRICS; MULTILEVEL INTERCONNECTION; NH3 PLASMA TREATMENT; SPIN ON GLASS;

DIELECTRIC MATERIALS;

EID: 51049111691     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1998.704794     Document Type: Conference Paper

References (2)

1. N. 0th, Ct al., Symposium on VLSI Technology Digest of Technical Papers, 7A-2 (1997) p.79-80
2. JJ. Aoki, ci al., Technical Digest of TEDM, 31.4 (1997) p.777-780