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Volumn 426, Issue 2, 1999, Pages 163-172

Adsorption of [(tBu)GaS]4 on GaAs(001)-(2×4)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ANNEALING; ASPECT RATIO; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE; SURFACE TREATMENT;

EID: 0032626594     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00191-0     Document Type: Article
Times cited : (3)

References (55)
  • 1
    • 0344915813 scopus 로고
    • Technology comparison: Gallium arsenide vs. silicon
    • D. Haigh, & R. Soin. London: Peter Peregrinus
    • Saul P.H. Technology comparison: gallium arsenide vs. silicon. Haigh D., Soin R. GaAs Technology and its Impact on Circuits and Systems. 1989;166-183 Peter Peregrinus, London.
    • (1989) GaAs Technology and Its Impact on Circuits and Systems , pp. 166-183
    • Saul, P.H.1
  • 4
    • 0004237593 scopus 로고
    • Doping in III-V semiconductors
    • H. Ahmed, M. Pepper, & A. Broers. Cambridge: Press Syndicate of the University of Cambridge
    • Schubert E.F. Doping in III-V semiconductors. Ahmed H., Pepper M., Broers A. Cambridge Studies in Semiconductor Physics and Microelectronic Engineering. 1993;Press Syndicate of the University of Cambridge, Cambridge.
    • (1993) Cambridge Studies in Semiconductor Physics and Microelectronic Engineering
    • Schubert, E.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.