Enhanced formation of thermal donors in oxygen-implanted silicon annealed at different pressures

Physica B: Condensed Matter

Volumn 293, Issue 1-2, 2000, Pages 44-48

  Neustroev, E P ^a   Antonova, I V ^b   Popov, V P ^b   Kilanov, D V ^b   Misiuk, A ^c  

^a NORTH EASTERN FEDERAL UNIVERSITY   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; ION IMPLANTATION; OXYGEN; PRESSURE EFFECTS; THERMAL EFFECTS;

ION PENETRATION; THERMAL DONORS;

SEMICONDUCTING SILICON;

EID: 0034501558     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(00)00535-4     Document Type: Article

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