Kinetics and dynamics of Si GSMBE studied by reflectance anisotropy spectroscopy

Surface Science

Volumn 402-404, Issue , 1998, Pages 480-486

  Zhang, J ^a   Lees, A K ^a   Schellinger, A ^a,c   Engstrom, J R ^a,b   Hsieh, M L ^a   Zettler, Jh T ^a   Taylor, A G ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b Cornell University   (United States)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Adsorption kinetics; Growth; Low index single crystal surfaces; Reflection spectroscopy; Silicon; Silicon germanium; Surface structure, morphology, roughness, and topography

Indexed keywords

ADSORPTION; DESORPTION; ELECTRONIC STRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SURFACE ROUGHNESS; THIN FILMS;

REFLECTANCE ANISOTROPY SPECTROSCOPY (RAS); SURFACE TOPOGRAPHY;

SEMICONDUCTING FILMS;

EID: 0031633825     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00027-2     Document Type: Article

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