Effect of UV-ozone oxidation on the device characteristics of InP-based heterostructure bipolar transistors

Journal of Electronic Materials

Volumn 29, Issue 12, 2000, Pages

  Driad, R ^a   McKinnon, W R ^a   Lu, Z H ^b   McAlister, S P ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; GAIN MEASUREMENT; LEAKAGE CURRENTS; OXIDATION; OZONE; SEMICONDUCTING INDIUM PHOSPHIDE; ULTRAVIOLET RADIATION;

INDIUM GALLIUM ARSENIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034498381     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0127-z     Document Type: Article

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