Electrical stress damage reversal in non-passivated fully self-aligned InP HBTs by ozone surface treatment

Electronics Letters

Volumn 35, Issue 25, 1999, Pages 2229-2231

  Matine, N ^a   Soerensen, G ^a   Bolognesi, C R ^a   DiSanto, D ^a   Xu, X ^a   Watkins, S P ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OZONE; PASSIVATION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; STRESS ANALYSIS; SURFACE TREATMENT;

DOUBLE HETEROSTRUCTURE BIPOLAR TRANSISTORS (DHBT); ELECTRICAL STRESS DAMAGE; SINGLE HETEROSTRUCTURE BIPOLAR TRANSISTORS (SHBT);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033353879     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991467     Document Type: Article

References (8)

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3. MATINE, N., DVORAK, M.W., PELOUARD, J.L., PARDO, F., and BOLOGNESI, C.R.: 'Fabrication and characterization of InP heterojunction bipolar transistors with emitter edges parallel to [001] and [010] crystal orientations', Jpn. J. Appl. Phys., 1999, 38, pp. 1200-1203
4. 0.49/InP fully self-aligned double heterojunction bipolar transistors with a C-doped base: A preliminary reliability study', to be published in Microelectron. Reliab.
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