Structural and morphological investigations of the initial stages in solid source molecular beam epitaxy of SiC on (111)Si

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 544-548

  Attenberger, W ^a   Lindner, J ^a   Cimalla, V ^b   Pezoldt, J ^b  

^a UNIVERSITY OF AUGSBURG   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SILICON WAFERS; SUPERSATURATION; SURFACE STRUCTURE;

SOLID SOURCE MOLECULAR BEAM EPITAXY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0001320150     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00470-X     Document Type: Article

References (12)

1. Nishino S., Powell J.A., Will H.A. Appl. Phys. Lett. 42:1983;460-462.
2. Li J.P., Steckl A.J. J. Electrochem. Soc. 142:1995;634-641.
3. Choyke W.J., Feng Z.C., Powell J.A. J. Appl. Phys. 64:1988;3163-3175.
4. Zekentes K., Papaioannou V., Pecz B., Stoemenos J. J. Cryst. Growth. 157:1995;392-399.
5. Pezoldt J., Cimalla V., Stauden Th., Ecke G., Eichhorn G., Scharmann F., Schipanski D. Diam. Relat. Mater. 6:1997;1311.
6. Brown A.S., Watts B.E. J. Appl. Cryst. 3:1970;172-174.
7. K. Volz, S. Schreiber, M. Zeitler, B. Rauschenbach, B. Stritzker, Surf. Coat. Technol. (1999) in press.
8. Cimalla V., Karagodina J.K., Pezoldt J., Eichhorn G. Mater. Sci. Eng. B29:1994;170-175.
9. V. Cimalla, Th. Stauden, G. Ecke, F. Scharmann, S. Sloboshanin, J.A. Schaefer, G. Eichhorn, J. Pezoldt, Appl. Phys. Lett. (1999) 73 (1998) 3542-3544.
10. Ecke G., Rößler H., Cimalla V., Pezoldt J., Stauden Th. Fresen. J. Anal. Chem. 361:1998;561-568.
11. Venables J.A., Price G.R. Matthews J.W. Epitaxial Growth, ch. 4. 1975;381-436 Academic Press, New York.
12. Rimai L., Ager R., Weber W.H., Hangas J., Samman A., Zhu W. J. Appl. Phys. 77:1995;6601-6608.