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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 12 A, 2000, Pages 6663-6671

Fabrication of low-stress plasma enhanced chemical vapor deposition silicon carbide films

(4) Lin, Tzu Yin a Duh, Jenq Gong a Chung, Chen Kuei b Niu, Huan a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

Hydrogen incorporation; Hydrogenated bonds; PECVD; Rapid thermal annealing; Silicon carbide; Stress

Indexed keywords

ANNEALING; CERAMIC FIBERS; COMPRESSIVE STRESS; CRYSTAL STRUCTURE; HYDROGEN BONDS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STRESS CONCENTRATION; STRESS RELAXATION; SUBSTRATES;

HYDROGEN INCORPORATION;

SILICON CARBIDE;

EID: 0034474675 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.6663 Document Type: Article

Times cited : (11)

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