Modeling the roles of oxygen vacancies in thin film ferroelectric memory

IEEE International Symposium on Applications of Ferroelectrics

Volumn 1, Issue , 2000, Pages 157-160

  Lo, V C ^a   Chen, Z J ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FERROELECTRICITY; HAMILTONIANS; INTERFACES (MATERIALS); MAGNETIC HYSTERESIS; MATHEMATICAL MODELS; MONTE CARLO METHODS; NONVOLATILE STORAGE; OXYGEN; POINT DEFECTS; THERMODYNAMIC PROPERTIES;

DEFECT-DIPOLE INTERACTION; ISING MODEL; LANDAU-DEVONSHIRE THEORY; OXYGEN VACANCIES; THIN FILM FERROELECTRIC MEMORY;

FERROELECTRIC THIN FILMS;

EID: 0034473329     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

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9. Kinetic ising model in an oscillating field: Avrami theory for the hysteresis response and finite-size scaling for the dynamic phase transition
10. 3 thin films deposited by laser ablation
11. Injection-controlled size effect on switching of ferroelectric thin films
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13. Effects of boundary conditions on magnetization switching in kinetic ising models of nanoscale ferromagnets