Fixed oxide charge in n-type silicon wafers studied by ac surface photovoltage technique

Semiconductor Science and Technology

Volumn 15, Issue 1, 2000, Pages 40-43

  Munakata, C ^a   Shimizu, H ^b  

^a TOHOKU INSTITUTE OF TECHNOLOGY   (Japan)

^b NIHON UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CONTAMINATION; ELECTRIC CHARGE; PHOTOVOLTAIC EFFECTS; THERMOOXIDATION;

FIXED OXIDE CHARGES;

SILICON WAFERS;

EID: 0033640297     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/1/307     Document Type: Article

References (30)

1. Deal B E 1980 IEEE Trans. Electron Devices 27 606-8
2. Muller R S and Kamins T I 1986 Device Electronics for Integrated Circuits 2nd edn (New York: Wiley) section 8.4
3. Ichimura M, Hirano M, Kato N, Arai E, Takamatsu H and Sumie S 1999 Japan. J. Appl. Phys. 38 L292-4
4. Cheng Z Y and Ling C H 1998 J. Appl. Phys. 83 5289-94
5. Munakata C and Watanabe K 1991 Semicond. Sci. Technol. 6 612-5
6. Deal B E, Sklar M, Grove A S and Snow E H 1967 J. Electrochem. Soc. 114 266-74
7. Morison S R 1953 J. Phys. Chem. 57 860-3
8. Gatos H C and Lagowski J 1973 J. Vac. Sci. Technol. 10 130-5
9. Nakhmanson R S 1975 Solid-State Electron. 18 617-26
10. Kamieniecki E 1982 J. Vac. Sci. Technol. 20 811-14
11. Munakata C, Nishimatsu S, Honma N and Yagi K 1984 Japan. J. Appl. Phys. 23 1451-61
12. Munakata C and Nishimatsu S 1986 Japan. J. Appl. Phys. 25 807-12
13. Munakata C 1988 Japan. J. Appl. Phys. 27 759-64
14. Lagowski J, Edelman P, Dexter M and Henley W 1992 Semicond. Sci. Technol. 7 A185-92
15. Jastrzebski L 1990 Defect Control in Semiconductors ed K Sumino (Amsterdam: North-Holland) pp 593-603
16. Powell R J and Berglund C N 1971 J. Appl. Phys. 42 4390-7
17. Kern W and Puotinen D A 1970 RCA Rev. 31 187-206
18. Munakata C and Shimizu H 1990 Semicond. Sci. Technol. 5 991-3
19. Shimizu H and Munakata C 1991 Japan. J. Appl. Phys. 30 2466-7
20. Iler R K 1965 The Chemistry of Silica (New York: Wiley) pp 88,192
21. Eisenman G 1965 Advances in Analytical Chemistry and Instrumentation ed R N Reilley (New York: Wiley) pp 339-44
22. deLarios J M, Kao D B, Helms C R and Deal B E 1989 Appl. Phys. Lett. 54 715-7
23. Shimizu H, Uchida H and Ishiwari S 1994 Japan. J. Appl. Phys. 33 5690-1
24. Shimizu H and Munakata C 1994 Japan. J. Appl. Phys. 33 3335-8
25. Shimizu H, Shull A and Munakata C 1996 Proc. SPIE 2877 174-85
26. Shimizu H and Munakata C 1992 Japan. J. Appl. Phys. 31 729-31
27. Kinameri K, Munakata C and Mayama K 1988 J. Phys. E: Sci. Instrum. 21 91-7
28. Wang Y, Nishioka Y, Ma T P and Barker R C 1988 Appl. Phys. Lett. 52 573-5
29. Shimizu H and Munakata C 1990 Semicond. Sci. Technol. 5 842-6
30. Shimizu H and Munakata C 1991 Semicond. Sci. Technol. 6 756-60