Densification and stress development for the chemical-solution deposition of PZT thin layers on silicon

IEEE International Symposium on Applications of Ferroelectrics

Volumn 1, Issue , 2000, Pages 397-400

  Ong, R J ^a   Payne, D A ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DENSIFICATION; DEPOSITION; ELLIPSOMETRY; INTERFACES (MATERIALS); LASER APPLICATIONS; LEAD COMPOUNDS; PYROLYSIS; SHRINKAGE; STRESS ANALYSIS; TENSILE STRESS; THERMOANALYSIS;

LASER REFLECTANCE; LEAD ZIRCONATE TITANATE; PYROCHLORE;

FERROELECTRIC THIN FILMS;

EID: 0034470392     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)

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3. Processing effects in the sol-gel preparation of PZT dried gels, powders, and ferroelectric thin layers
4. The role of interfaces on an apparent grain size effect on the dielectric properties for ferroelectric barium titanate ceramics
5. Residual stress in PZT thin films and its effect on ferroelectric properties
6. 3/Pt thin-film stacks for integrated ferroelectric capacitors
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8. 3) thin film precursor solutions
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10. Origins and evolution of stress development in sol-gel derived thin layers and multideposited coatings of lead titanate
11. Sol-gel processing of PbTiO3, PbZrO3, PZT, and PLZT thin films
12. Integrated electroceramics: Densification and stress development in sol-gel derived thin layers