Effects of implanted arsenic on Ti-silicide formation

Diffusion and Defect Data Pt.B: Solid State Phenomena

Volumn 71, Issue , 2000, Pages 147-172

  Milosavljevic M ^a   Bibic N ^a   Perusko D ^a   Jeynes, C ^b   Bangert, U ^c  

^a UNIVERSITY OF BELGRADE   (Serbia)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); ION IMPLANTATION; REACTION KINETICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ION BEAM MIXING;

SEMICONDUCTING FILMS;

EID: 0034464928     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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