Characterization of dopant interdiffusion and power reduction on TiSi2 local wiring technology in sub-half-micron complementary metal oxide semiconductor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. A, 1998, Pages 1674-1679

  Ida, Jiro ^a   Ohtomo, Atsushi ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

a Si; Dopant interdiffusion; Local wiring; Low power; Sub half micron CMOS; TiSi2

Indexed keywords

AMORPHOUS SILICON; BORON; CMOS INTEGRATED CIRCUITS; ELECTRIC VARIABLES MEASUREMENT; ENERGY DISSIPATION; INTERDIFFUSION (SOLIDS); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

TITANIUM DISILICIDE;

MOS DEVICES;

EID: 0032050399     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1674     Document Type: Article

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