Novel ultra-clean self aligned suicide (salicide) technology using double titanium deposited silicide (DTD) process for 0.1 μm gate electrode

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1174-1178

  Kotaki, Hiroshi ^a   Nakano, Masayuki ^a   Kataoka, Kotaro ^a   Kakimoto, Seizo ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

CMOS; LSI; MOSFET; Salicide; Silicon; Suicide; Titanium; Titanium suicide

Indexed keywords

EID: 0038088038     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1174     Document Type: Article

References (12)

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