Transient thermal simulation of power devices with Cu layer

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 257-260

  Chung, Young S ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COPPER; DESIGN FOR TESTABILITY; DIELECTRIC MATERIALS; FINITE ELEMENT METHOD; HEAT SINKS; LAPLACE TRANSFORMS; TEMPERATURE MEASUREMENT; THERMAL CONDUCTIVITY; THICKNESS MEASUREMENT;

COPPER LAYER INTEGRATION; ENERGY CAPABILITY ENHANCEMENT; TRANSIENT THERMAL SIMULATION;

POWER INTEGRATED CIRCUITS;

EID: 0032598967     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)