Process variations in use for the first generations of FRAM® memory products

Integrated Ferroelectrics

Volumn 31, Issue 1-4, 2000, Pages 213-231

  Davenport, T ^a   Mitra, S ^a  

^a Ramtron International Corporation   (United States)

Author keywords

Ferroelectric memory; FRAM; FRAM products; Quality; Reliability; Retention

Indexed keywords

ELECTRONICS PACKAGING; FERROELECTRIC MATERIALS; HYDROGEN; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICE MANUFACTURE; STRESSES;

FERROELECTRIC MEMORY; RETENTION;

FERROELECTRIC DEVICES;

EID: 0034447729     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584580008215655     Document Type: Conference Paper

References (16)

1. Test methods and procedures for solid state devices used in transportation/automotive applications
2. General specifications for plastic encapsulated microcircuits for use in rugged applications