Theoretical and experimental analysis of the low dielectric constant of fluorinated silica

Materials Research Society Symposium - Proceedings

Volumn 579, Issue , 2000, Pages 255-260

  Demkov, A ^a   Liu, R ^a   Zollner, S ^a   Werho, D ^a   Kottke, M ^a   Gregory, R B ^a   Angyal, M ^a   Filipiak, S ^a   McIntyre, L C ^b   Ashbaugh, M D ^b  

^a MOTOROLA INC   (United States)

^b UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL ATOMIC STRUCTURE; DOPING (ADDITIVES); ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GROUND STATE; HALOGENATION; PERMITTIVITY; X RAY PHOTOELECTRON SPECTROSCOPY;

FLUORINATED SILICA;

SILICA;

EID: 0034447038     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/PROC-579-255     Document Type: Article

References (14)

1. Low-dielectric constant materials V