Fabrication of 30 nm gate length electrically variable shallow-junction metal-oxide-semiconductor field-effect transistors using a calixarene resist

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 6, 1997, Pages 2806-2808

  Sakamoto, T ^a   Kawaura, H ^a   Baba, T ^a   Fujita, J ^a   Ochiai, Y ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; FABRICATION; GATES (TRANSISTOR); OPTIMIZATION; PHOTORESISTS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING;

CALIXARENE RESIST; SHALLOW JUNCTION METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS;

MOSFET DEVICES;

EID: 0031273316     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589732     Document Type: Article

References (5)

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3. H. Noda, F. Murai, and S. Kimura, Tech. Dig. Int. Electron Devices Meet. 123 (1993).
4. H. Kawaura, T. Sakamoto, T. Baba, Y. Ochiai, and J. Fujita, S. Matsui, and J. Sone, Jpn. J. Appl. Phys., Part 1 36, 1569 (1997).
5. J. Fujita, Y. Ohnishi, Y. Ochiai, and S. Matsui, Appl. Phys. Lett. 68, 1297 (1996).