Numerical analysis of characterized back interface traps of SOI devices by R-G current

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 21, Issue 12, 2000, Pages 1145-1151

  He, J ^a   Huang, R ^a   Zhang, X ^a   Huang, A H ^a   Sun, F ^a   Wang, Y Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Interface traps; Recombination generation current; SOI

Indexed keywords

ELECTRON TRAPS; HOT CARRIERS; NUMERICAL ANALYSIS; PHASE INTERFACES; SEMICONDUCTING FILMS;

INTERFACE TRAPS; RECOMBINATION GENERATION CURRENT;

SEMICONDUCTOR DEVICES;

EID: 0034433052     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)