Recombination current modeling and carrier lifetime extraction in dual-gate fully-depleted SOI devices

IEEE Transactions on Electron Devices

Volumn 46, Issue 7, 1999, Pages 1503-1509

  Ernst, Thomas ^b,c   Cristoloveanu, Sorin ^a,b,c   Vandooren, Anne ^d   Rudenko, Tamara ^e   Colinge, Jean Pierre ^a,d  

^a IEEE

^b Grenoble INP Phelma   (France)

^c STMICROELECTRONICS   (France)

^d University of California Davis   (United States)

^e INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER RECOMBINATION;

CHARGE CARRIERS; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY;

MOSFET DEVICES;

EID: 0032678404     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772502     Document Type: Article

References (11)

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