Recombination current modeling and carrier lifetime extraction in dual-gate fully-depleted SOI devices

IEEE Transactions on Electron Devices

Volumn 46, Issue 7, 1999, Pages 1503-1509

  Ernst, Thomas ^b,c   Cristoloveanu, Sorin ^a,b,c   Vandooren, Anne ^d   Rudenko, Tamara ^e   Colinge, Jean Pierre ^a,d  

^a IEEE

^b Grenoble INP Phelma   (France)

^c STMICROELECTRONICS   (France)

^d Davis   (United States)

^e INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER RECOMBINATION;

CHARGE CARRIERS; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY;

MOSFET DEVICES;

EID: 0032678404     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772502     Document Type: Article

References (11)

1. J.-P. Colinge, Silicon-On-Insulator Technology: Materials to VLSI, 2nd ed. Norwell, MA: Kluwer, 1997.
2. S. Cristoloveanu and S. S. Li, Electrical Characterization of Silicon-On-Insulator Materials and Devices. Norwell, MA: Kluwer, 1995.
3. A. Wei, M. J. Sherony, and D. A. Antoniadis, "Effect of floating body charge in SOI MOSFET design," IEEE Trans. Electron. Devices, vol. 45, pp. 430-438, Feb. 1998.
4. D. Munteanu, D. A. Weiser, S. Cristoloveanu, O. Faynot, J. L. Pelloie, and J. G. Possum, "Generation/recombination transient effects in SOI transistors: Systematic experiment and simulations," IEEE Trans. Electron. Devices, vol. 45, pp. 1678-1683, Aug. 1998.
5. D. K. Schroder, Semiconductor Material and Device Characterization. New York: Wiley, 1990.
6. A. Neugroschel, C. T. Sah, K. M. Han, M. S. Carroll, T. Nishida, J. T Kavalieros, and Y. Lu, "Direct-current measurement of oxide and interface traps on oxidized silicon," IEEE Trans. Electron. Devices, vol. 42, pp. 1657-1662, 1995.
7. T. E. Rudenko, A. N. Rudenko, and V. S. Lysenko, "Electrical properties of ZMR SOI structures: Characterization techniques and experimental results," in Physical and Technical Problems of SOI Structures an Devices. Norwell, MA: Kluwer, 1995, pp. 169-179.
8. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
9. F. Balestra, S. Cristoloveanu, T. Elewa, M. Benachir, and J. Brini, "Double gate silicon on insulator transistor with volume inversion: A new device with greatly enhanced performance," IEEE Electron. Device Lett., vol. EDL-8, pp. 410-412, 1987.
10. W. Shockley and W. T. Read, "Statistics of the recombination of hole and electrons," Phys. Rev., vol. 87, pp. 835-842, 1952.
11. H.-K. Lim and J. G. Possum, "Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET's," IEEE Trans. Electron Devices, vol. ED-30, pp. 1244-1251, 1983.