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Volumn 622, Issue , 2000, Pages T651-T656
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A study of Pt/AlN/6H-SiC MIS structures for device applications
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM NITRIDE;
CAPACITANCE MEASUREMENT;
CURRENT DENSITY;
CURRENT VOLTAGE CHARACTERISTICS;
DIELECTRIC RELAXATION;
ELLIPSOMETRY;
FILM GROWTH;
LEAKAGE CURRENTS;
MOLECULAR BEAM EPITAXY;
PERMITTIVITY;
SEMICONDUCTOR DEVICE STRUCTURES;
SURFACE ROUGHNESS;
THERMAL EFFECTS;
THIN FILMS;
FILM STRUCTURE;
OPTICAL CONSTANTS;
SILICON CARBIDE;
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EID: 0034431151
PISSN: 02729172
EISSN: None
Source Type: Journal
DOI: 10.1557/proc-622-t6.5.1 Document Type: Article |
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Times cited : (3)
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References (10)
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