Dose and shape modification proximity effect correction for forward-scattering range scale features in electron beam lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 12 B, 2000, Pages 6827-6830

  Seo, Eunsung ^a   Kim, Ohyun ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Dose modification; Electron beam lithography; Exposure contrast; Forward scattering; Proximity effect correction; Shape modification

Indexed keywords

COMPUTER SIMULATION; ELECTRON SCATTERING; ITERATIVE METHODS; MATHEMATICAL MODELS;

PROXIMITY EFFECT CORRECTION;

ELECTRON BEAM LITHOGRAPHY;

EID: 0034428640     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6827     Document Type: Article

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