Proximity effect correction by pattern modified stencil mask in large-field projection electron-beam lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 6767-6773

  Kobinata, Hideo ^a   Yamashita, Hiroshi ^a,b   Nomura, Eiichi ^a   Nakajima, Ken ^a   Kuroki, Yukinori ^b  

^a NEC CORPORATION   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

Electron beam lithography; Mask bias; Pattern modification; Proximity effect correction; Stencil mask

Indexed keywords

EID: 0001242467     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6767     Document Type: Article

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