Determination of proximity effect parameters and the shape bias parameter in electron beam lithography

Microelectronic Engineering

Volumn 53, Issue 1, 2000, Pages 305-308

  Soe, Eunsung ^a   Choi, Bo Kyung ^b   Kim, Ohyun ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Hyundai Microelectronics Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON SCATTERING; ERROR ANALYSIS; INTEGRATED CIRCUIT TESTING; SCANNING ELECTRON MICROSCOPY; SPATIAL VARIABLES CONTROL;

BEAM CURRENT INSTABILITY; CRITICAL DIMENSION CONTROL; DOSE MODULATION METHOD; ELECTRON BEAM WRITER; PROXIMITY EFFECT PARAMETERS; PROXIMITY ERROR CORRECTION;

ELECTRON BEAM LITHOGRAPHY;

EID: 0034205516     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00320-8     Document Type: Article

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