SCOPUS 정보 검색 플랫폼

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn , Issue , 2000, Pages 513-518

Optical properties of Al1-xInxN thin films determined by spectroscopic ellipsometry

(6) Kasic, A a Schubert, M a Rheinlander B a Off, J a Scholz, F a Herzinger, C M a

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELLIPSOMETRY; FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHONONS; SAPPHIRE; STRAIN; THICK FILMS; THIN FILMS;

ALUMINUM INDIUM NITRIDE; INFRARED SPECTROSCOPIC ELLIPSOMETRY; TRANSVERSE OPTICAL PHONON MODE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0034424738 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (2)

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