Excitation transfer in vertically self-organized pairs of unequal-sized InAs/GaAs quantum dots

Chinese Physics Letters

Volumn 17, Issue 8, 2000, Pages 615-616

  Wang, Hai Long ^a,b   Feng, Song Lin ^a   Yang, Fu Hua ^a   Sun, Bao Quan ^a   Jiang, De Sheng ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b QUFU NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY TRANSFER; GALLIUM ARSENIDE; GROUND STATE; III-V SEMICONDUCTORS; INDIUM ARSENIDE; NANOCRYSTALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE;

BI-LAYER; EXCITATION TRANSFER; GROUND STATE TRANSITION; INAS-GAAS QUANTUM DOTS; INAS/GAAS; SECOND LAYER; SELF-ORGANISED; SPACER THICKNESS; TRANSFER PROCESS; TRANSITION ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034417509     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/17/8/025     Document Type: Article

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