Red luminescence from self-assembled in AlAs/AIGaAs quantum dots with bimodal size distribution

Chinese Physics Letters

Volumn 16, Issue 4, 1999, Pages 298-300

  Zhou, Wei ^a   Xu, Bo ^a   Xu, Huai Zhe ^a   Liu, Feng Qi ^a   Gong, Qian ^a   Jiang, Wei Hong ^a   Sun, Zhong Zhe ^a   Ding, Ding ^a   Liang, Ji Bei ^a   Wang, Zhan Guo ^a   Zhu, Zuo Ming ^a   Li, Guo Hua ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ARSENIDE; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; NANOCRYSTALS;

ATOMIC FORCE MICROGRAPHS; BIMODAL DISTRIBUTION; BIMODAL SIZE DISTRIBUTION; DOT SIZE; DOUBLE PEAK STRUCTURE; EXCITATION INTENSITY; GAAS SUBSTRATES; MOLECULAR-BEAM EPITAXY; RED LUMINESCENCE; RED-EMITTING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033438352     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/16/4/025     Document Type: Article

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