Process integration issues for doping of ultrashallow junctions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 468-471

  Current, M I ^a   Foad, M A ^b   Murrell, A J ^b   Collart, E J H ^b   De Cock, G ^b   Jennings, D ^b  

^a Current Scientific   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; DEGASSING; ION IMPLANTATION; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING;

PROCESS INTEGRATION; ULTRASHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0034350495     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591213     Document Type: Article

References (16)

1. J. England, L. Joyce, C. Burgess, S. Moffatt, M. Foad, D. Armour, and M. J. Current., Proc. IEEE 96TH8182, 470 (1997).
2. M. A. Foad and D. Jennings, Solid State Technol. 41, 43 (1998).
3. R. Simonton, in Ion Implantation Science and Technology, edited by J. F. Ziegler (Ion Beam Technology, Yorktown Heights, NY, 1996), p. 293.
4. K. Cho, W. R. Allen, T. G. Finstad, W. K. Chu, J. Liu, and J. J. Wortman, Nucl. Instrum. Methods Phys. Res. B 6, 265 (1985).
5. M. I. Current, N. Turner, T. C. Smith, and D. Crane, Solid State Technol. 28, 163 (1985).
6. R. G. Wilson, J. Appl. Phys. 52, 3985 (1981).
7. M. I. Current, US Patent No. 5,155,369 (October 13, 1992).
8. K. Jones and J. Gyulai, in Ion Implantation Science and Technology, edited by J. F. Ziegler (Ion Beam Technology, Yorktown Heights, NY, 1996), p. 261.
9. A. J. Murrell, E. J. H. Collart, M. A. Foad, and D. Jennings, J. Vac. Sci. Technol. B (these proceedings).
10. M. Bruel, Mater. Res. Bull. 23, 35 (1998).
11. D. F. Downey, D. Brown, J. J. Cummings, A. F. Betuch, E. Ishida, and C-H. Ng, Proc. IEEE (to be published).
12. E. Kondoh, G. Vereecke, M. H. Heyns, K. Maex, and T. Gutt, J. Vac. Sci. Technol. A 17, 650 (1999).
13. M. I. Current, M. Foad, J. England, D. Lopes, C. Jones, and D. Su, J. Vac. Sci. Technol. B 16, 327 (1998).
14. G. Hobler and S. Selberherr, IEEE Trans. Comput.-Aided Des. 8, 450 (1988).
15. R. von Criegern, F. Jahnel, R. Lange-Gieseler, P. Pearson, G. Hobler, and A. Simonescu, J. Vac. Sci. Technol. B 16, 386 (1998).
16. M. I. Current, M. C. Vella, and W. Lukaszek, Proc. IEEE 96TH8182, 53 (1997).