As4 pressure dependence of surface segregation of indium atoms during molecular beam epitaxy of In0.08Ga0.92As/GaAs superlattices on (411)A GaAs substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1579-1582

  Kitada, Takahiro ^a   Tatsuoka, Yasuaki ^a   Shimomura, Satoshi ^a   Hiyamizu, Satoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; HETEROJUNCTIONS; INDIUM; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SURFACE PHENOMENA; X RAY CRYSTALLOGRAPHY;

HIGH RESOLUTION X RAY DIFFRACTION (HRXRD); PRESSURE RATIO; SURFACE SEGREGATION;

SEMICONDUCTOR SUPERLATTICES;

EID: 0034350485     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591430     Document Type: Article

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