Etching efficiency for Si and SiO2 by CF+x, F+, and C+ ion beams extracted from CF4 plasmas

Plasma Chemistry and Plasma Processing

Volumn 20, Issue 1, 2000, Pages 145-157

  Yamaguchi, T ^a   Sasaki, K ^a   Kadota, K ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

CF+x ion beam; Chemical reactivity; Etching efficiency; Si; SiO2

Indexed keywords

EID: 0034339734     PISSN: 02724324     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1006930129066     Document Type: Article

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