Study of surface and interface roughnesses in porous silicon by high-resolution x-ray methods

Crystallography Reports

Volumn 45, Issue 5, 2000, Pages 842-847

  Lomov, A A ^a   Bushuev, V A ^b   Karavanskii V A ^c  

^a SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY   (Russian Federation)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

^c PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034337518     PISSN: 10637745     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1312933     Document Type: Article

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